High Speed Photodetector, 830-2150 nm Battery Biased Extended InGaAs Detector, 10 GHz

The 818-BB-51 High Speed InGaAs Detector is built from a free-space extended InGaAs photodiode with a 40 um active diameter and a fast <28 ps rise time. With the wavelength range of 830 - 2150 nm, it allows monitoring Thulium (Tm) and Holmium (Ho) doped lasers as well as other NIR lasers. It includes a built-in battery-powered 3V bias, an on-off switch, and an SMA connector output. The photodetectors have an internal 50 Ω termination. As the responsivity data is applicable to the diode only, the detector output should be determined based on 1/2 the responsivity of that shown on graph. The batteries are easily replaceable, and by disconnecting the detector from the oscilloscope input, when not in use, you can extend the lifetime of the batteries. It replaces the obsolete Model 818-BB-50. It is equivalent to Coherent's Model ET-5000 (P/N 120-10105-0001).

Silicon Free Space Optical Detectors

The 818-BB-21 and -40 consist of free-space, small and large area Silicon detectors, with rise times ranging from 300 ps to 1.5 ns. Each unit, other than the 818-BB-40, includes a built-in bias supply consisting of standard 3 V lithium cells and a 50 ohm BNC connector output. The 818-BB-40 comes with an external 24 VDC power supply.

UV-Enhanced Silicon Free Space Detector

The 818-BB-27 consists of a silicon detector with an enhanced ultraviolet response, making it well suited for the fourth harmonic Nd:YAG, YLF or Glass Lasers and Excimer Lasers. Additionally, its large active area and fast response time make it an excellent general-purpose biased detector for the 200 to 1100 nm wavelength region. To attain its fast response, this detector comes with a 24 VDC external power supply.

InGaAs Free Space Detectors

The 818-BB-30, -31, and -35 consist of free-space, small and large area InGaAs detectors, with rise times ranging from 300 ps to 1.5 ns for covering the 1000-1600 nm wavelength range. Each unit includes a built-in bias supply consisting of standard 3 V lithium cells and a 50 ohm BNC connector output. The 818-BB-51 features an extended InGaAs photodetector with a wavelength range of 1475–2100 nm.

GaAs Free Space Detector

The 818-BB-45 high speed optical detector consists of free-space 40 µm diameter GaAs photodetector, with a 30 ps rise time and 12.5 GHz bandwidth. It includes a built-in bias supply consisting of single 3 V lithium cell and a 50 ohm BNC connector output. The batteries are easily replaceable and by disconnecting the detector from the oscilloscope input, when not in use, you can extend the lifetime of the batteries.

Optical Post Mounting

An 8-32 threaded hole at the bottom of 818-BB biased photoreceivers allows for optical post mounting.

Handle With ESD Care

These detectors are very susceptible to damage by electrostatic discharge (ESD). Please use ESD protective measures, like the FK-STRAP , when unpacking and handling these devices.

Rise Times as Fast as 25 ps

The 818-BB-35 and 818-BB-45 photodiode detector modules offer a low-cost solution for ultra-fast measurements offering a 12.5 GHz bandwidth. These detectors are suitable for applications where detector rise time of <25 ps (<30 ps for 818-BB-45) are required for Q-switched and Ultrafast Laser output analysis. These detectors also utilize 3 V lithium cells (supplied).

Specifications

Technical Specs

Optical Input
Free Space
Device Type
Biased Detector
Detector Diameter
0.040 mm
Detector Material
Extended InGaAs
Detector Type
PIN
Acceptance Angle
20°
Wavelength Range
830-2150 nm
3 dB Bandwidth
DC to 10 GHz
Rise Time
28 ps
Responsivity
1.3 A/W @ 2.0 µm
Output Connector
SMA
Output Impedance
50 Ω

Amplified
No
Bias Voltage
3 V
Cut-off Frequency
>12.5 GHz
Dark Current
<1 uA
Reverse Breakdown
25 V
NEP
<15 pW/√Hz @ 2000 nm
Fall Time
<28 ps
Saturation Current
3 mA
Power Requirements
One 3V lithium battery (Duracell DL2430 or equivalent)
Thread Type
8-32 and M4

Optical Input
Free Space
Device Type
Biased Detector
Detector Diameter
0.040 mm
Detector Material
Extended InGaAs
Detector Type
PIN
Acceptance Angle
20°
Wavelength Range
830-2150 nm
3 dB Bandwidth
DC to 10 GHz
Rise Time
28 ps
Responsivity
1.3 A/W @ 2.0 µm
Output Connector
SMA
Output Impedance
50 Ω

Amplified
No
Bias Voltage
3 V
Cut-off Frequency
>12.5 GHz
Dark Current
<1 uA
Reverse Breakdown
25 V
NEP
<15 pW/√Hz @ 2000 nm
Fall Time
<28 ps
Saturation Current
3 mA
Power Requirements
One 3V lithium battery (Duracell DL2430 or equivalent)
Thread Type
8-32 and M4

Resources & Downloads

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