High Speed Photodetector, 320-1000 nm Battery Biased Silicon Detector, 1.2 GHz

Specifications

  • Optical Input
    Free Space
  • Device Type
    Biased Detector
  • Detector Diameter
    0.4 mm
  • Active Area
    0.4 mm²
  • Detector Material
    Silicon
  • Detector Type
    PIN
  • Acceptance Angle
    10°
  • Wavelength Range
    320-1000 nm
  • 3 dB Bandwidth
    DC to 1.2 GHz
  • Rise Time
    300 ps
  • Responsivity
    0.47 A/W @ 830 nm
  • Output Connector
    BNC
  • Amplified
    No
  • Bias Voltage
    9 V
  • Cut-off Frequency
    1.2 GHz
  • Dark Current
    <0.1 nA
  • Junction Capacitance
    <1.5 pF
  • Measurement Type
    Beam shape, frequency
  • Reverse Breakdown
    20 V
  • NEP
    <0.01 pW/√Hz
  • Fall Time
    <300 ps
  • Saturation Current
    3 mA
  • Power Requirements
    Three 3V lithium batteries (Duracell DL2430 or equivalent)
  • Thread Type
    8-32 and M4
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